Material terms: MnAs, GaAs, As Tu0920 Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)
نویسندگان
چکیده
Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) M. Moreno Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain A. Kumar, M. Tallarida, Fritz-Haber-Institut der Max-Planck-Gesellshaft, Faradayweg 4-6, 14195 Berlin, Germany A. Ney, K. H. Ploog Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany K. Horn Fritz-Haber-Institut der Max-Planck-Gesellshaft, Faradayweg 4-6, 14195 Berlin, Germany (Date: 16 June 2008)
منابع مشابه
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature Tt, at which the remnant magnetization becomes z...
متن کاملMagnetotransport properties in „1100...- and „0001...-oriented MnAs films on GaAs substrates
Magnetic-field dependence of the resistivities in MnAs 1100 films on GaAs 001 and MnAs 0001 films on GaAs 111 B is investigated at low temperatures. Correspondence of the features in the longitudinal and transverse resistivities under reorientations of the magnetization enables us to distinguish the anisotropic magnetoresistance effect from the effects originating from the band structure of MnA...
متن کاملX-ray scattering and absorption studies of MnAs/GaAs heterostructures
Ferromagnetic MnAs thin films grown on GaAs ~001! substrates by molecular-beam epitaxy have been studied by the methods of grazing incidence x-ray scattering, x-ray diffraction, and extended x-ray-absorption fine structure. Microstructures in two films prepared with different first-layer growth conditions ~template effects! are compared in terms of the interfacial roughness in the layer structu...
متن کاملFerromagnetism of MnAs studied by heteroepitaxial films on GaAs(001).
Thin epitaxial films of MnAs--promising candidates for the spin injection into semiconductors--are well known to undergo simultaneously a first-order structural and magnetic phase transition at 10-40 degrees C. The evolution of stress and magnetization of MnAs/GaAs(001), both measured quantitatively with our cantilever beam magnetometer at the coexistence region of alpha-MnAs and beta-MnAs, rev...
متن کاملMicromagnetic investigation of MnAs thin films on GaAs surfaces
This work presents the study of the micromagnetic domain structure and the coupled magneto-structural phase transition of MnAs thin films on GaAs. In particular, the influence of substrate orientation, film thickness and external magnetic field on the magnetic and structural properties are investigated, employing the complementary measurement techniques atomic force microscopy-AFM / magnetic fo...
متن کامل